Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry

van Dorp, DennisDennisvan DorpArnauts, SophiaSophiaArnautsLaitinen, MikkoMikkoLaitinenSajavaara, TimoTimoSajavaaraMeersschaut, JohanJohanMeersschautConard, ThierryThierryConardHolsteyns, FrankFrankHolsteynsKelly, JohnJohnKelly2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/32045Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistryProceedings paperhttps://www.scientific.net/SSP.282.48