Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Mengehini, MatteoMatteoMengehiniStocco, AntonioAntonioStoccoBertin, MarconMarconBertinMarcon, DenisDenisMarconChini, AlessandroAlessandroChiniMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/21138Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse biasJournal article