De Jaeger, BriceBriceDe JaegerBonzom, RenaudRenaudBonzomLeys, FrederikFrederikLeysRichard, OlivierOlivierRichardVan Steenbergen, JanJanVan SteenbergenWinderickx, GillisGillisWinderickxVan Moorhem, ElsElsVan MoorhemRaskin, G.G.RaskinLetertre, F.F.LetertreBillon, T.T.BillonMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-162021-10-162005-06https://imec-publications.be/handle/20.500.12860/10299Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substratesJournal article