Kim, Young-ChangYoung-ChangKimConard, ThierryThierryConardVanhaeren, DanielleDanielleVanhaerenBaklanov, MikhaïlMikhaïlBaklanovVanhaelemeersch, SergeSergeVanhaelemeerschVandervorst, WilfriedWilfriedVandervorstMaex, KarenKarenMaex2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2667The formation and removal of residue formed during TiN fluorocarbon plasma etchingProceedings paper