Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of Si

Huyghebaert, CedricCedricHuyghebaertJanssens, TomTomJanssensBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorst2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5357Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of SiOral presentation