Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers

O'Connor, RobertRobertO'ConnorMcDonnell, StephenStephenMcDonnellHughes, GregGregHughesDegraeve, RobinRobinDegraeveKauerauf, ThomasThomasKauerauf2021-10-162021-10-162005-08https://imec-publications.be/handle/20.500.12860/10949Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layersJournal article