Guo, XinXinGuoSoltanian, EmadEmadSoltanianZhang, JingJingZhangVaissiere, NicolasNicolasVaissiereNeel, DelphineDelphineNeelRamirez, JoanJoanRamirezDecobert, JeanJeanDecobertUvin, SarahSarahUvinRoelkens, GuntherGuntherRoelkens2025-07-252025-07-252025978-1-5106-8488-10277-786XWOS:001511004800008https://imec-publications.be/handle/20.500.12860/45934We demonstrate for the first time an InP-on-silicon laser with a tuning range from 1652 nm to 1706 nm realized using micro-transfer printing (μTP) technology. The laser achieves an output power of 1 mW. The laser cavities are fabricated in imec’s silicon photonics (SiPh) pilot line on 200 mm Silicon-on-Insulator (SOI) wafers with micro-transfer printed III-V gain chips.Proceedings paper10.1117/12.3039975978-1-5106-8489-8WOS:001511004800008