Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process

Witters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardLoo, RogerRogerLooEneman, GeertGeertEnemanMertens, HansHansMertensBrunco, DavidDavidBruncoLee, Seung HunSeung HunLeeWaldron, NiamhNiamhWaldronHikavyy, AndriyAndriyHikavyyFavia, PaolaPaolaFaviaMilenin, AlexeyAlexeyMileninShimura, YosukeYosukeShimuraVrancken, ChristaChristaVranckenBender, HugoHugoBenderHoriguchi, NaotoNaotoHoriguchiBarla, KathyKathyBarlaThean, AaronAaronTheanCollaert, NadineNadineCollaert2021-10-212021-10-212013-12https://imec-publications.be/handle/20.500.12860/23399Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin processProceedings paper