Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress

Lee, KookjinKookjinLeeKaczer, BenBenKaczerKruv, AnastasiiaAnastasiiaKruvGonzalez, MarioMarioGonzalezEneman, GeertGeertEnemanOkudur, Oguzhan OrkutOguzhan OrkutOkudurGrill, AlexanderAlexanderGrillFranco, JacopoJacopoFrancoVici, AndreaAndreaViciDegraeve, RobinRobinDegraeveDe Wolf, IngridIngridDe Wolf2023-06-082023-02-272023-06-0820221541-7026WOS:000922926400113https://imec-publications.be/handle/20.500.12860/41173Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical StressProceedings paper10.1109/IRPS48227.2022.9764540978-1-6654-7950-9WOS:000922926400113DEGRADATIONDEVICE