Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Kao, K-HK-HKaoGodfrin, ClementClementGodfrinElsayed, AsserAsserElsayedLi, RoyRoyLiSimoen, EddyEddySimoenGrill, AlexanderAlexanderGrillKubicek, StefanStefanKubicekRadu, IulianaIulianaRaduGovoreanu, BogdanBogdanGovoreanu2022-09-012022-05-232022-09-0120220741-3106WOS:000794239500005https://imec-publications.be/handle/20.500.12860/39884Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic ApplicationsJournal article10.1109/LED.2022.3162368WOS:000794239500005FREQUENCY NOISE ASSESSMENTOXIDE TRAP DENSITYINTERFACE