Vapor phase doping for ultra shallow juntion formation in advanced Si CMOS devices

Shimizu, YasuaYasuaShimizuNguyen, DuyDuyNguyenJiang, SijiaSijiaJiangRosseel, ErikErikRosseelTakeuchi, ShotaroShotaroTakeuchiEveraert, Jean-LucJean-LucEveraertLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymax2021-10-182021-10-182010-01https://imec-publications.be/handle/20.500.12860/17977Vapor phase doping for ultra shallow juntion formation in advanced Si CMOS devicesMeeting abstract