Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

Li, XiangdongXiangdongLiPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakerootLiang, HuHuLiangYou, ShuzhenShuzhenYouWu, ZhichengZhichengWuZhao, MingMingZhaoGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2022-02-242022-02-2420210885-8993WOS:000613453900005https://imec-publications.be/handle/20.500.12860/39122Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation DielectricsJournal article10.1109/TPEL.2020.3031680WOS:000613453900005