Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility

Mitard, JeromeJeromeMitardVincent, BenjaminBenjaminVincentDe Jaeger, BriceBriceDe JaegerKrom, RaymondRaymondKromLoo, RogerRogerLooEneman, GeertGeertEnemanDe Meyer, KristinKristinDe MeyerMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17641Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobilityProceedings paper