Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)

Zahid, MohammedMohammedZahidDegraeve, RobinRobinDegraeveCho, Moon JuMoon JuChoPantisano, LuigiLuigiPantisanoVan Houdt, JanJanVan HoudtGroeseneken, GuidoGuidoGroesenekenJurczak, GosiaGosiaJurczakRuiz Aguado, DanielDanielRuiz Aguado2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16593Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)Proceedings paper