Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

Gao, WeiminWeiminGaoWiaux, VincentVincentWiauxHoppe, WolfgangWolfgangHoppePhilipsen, VickyVickyPhilipsenMelvin, LawrenceLawrenceMelvinHendrickx, EricEricHendrickxLucas, KevinKevinLucasKim, Ryan Ryoung hanRyan Ryoung hanKim2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30741Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparisonProceedings paperhttps://doi.org/10.1117/12.2297677