Effect of test structure on electromigration characteristics in 3D-TSV stacked devices

Oba, YoshiyukiYoshiyukiObaDe Messemaeker, JokeJokeDe MessemaekerTyrovouzi, Anna MariaAnna MariaTyrovouziMiyamori, YuichiYuichiMiyamoriDe Vos, JoeriJoeriDe VosWang, TengTengWangBeyer, GeraldGeraldBeyerBeyne, EricEricBeyneDe Wolf, IngridIngridDe WolfCroes, KristofKristofCroes2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24332Effect of test structure on electromigration characteristics in 3D-TSV stacked devicesProceedings paper