Zhang, MinghuaMinghuaZhangScheerder, JeroenJeroenScheerderSoulie, Jean-PhilippeJean-PhilippeSoulieWu, ChenChenWuPark, SeonghoSeonghoParkTokei, ZsoltZsoltTokeiFleischmann, ClaudiaClaudiaFleischmannAdelmann, ChristophChristophAdelmann2026-03-302026-03-302025979-8-3315-3782-12380-632Xhttps://imec-publications.be/handle/20.500.12860/58966Despite their favorable resistivity, cohesive energy, and adhesion properties, intermetallic compounds still face challenges related to compositional fluctuations. Here, we have studied this phenomenon in NiAl thin films utilizing atom-probe tomography and reciprocal space mapping. Our results demonstrate a substantial reduction of compositional non-uniformity in epitaxial NiAl layers. Structural characterization via reciprocal space mapping revealed a lattice parameter deviation of less than 0.5% from the bulk NiAl lattice constant, indicating a relaxed epitaxial structure. This strain-minimized epitaxial configuration can be understood as a primary mechanism for the reduction of compositional fluctuations in NiAl, highlighting the potential advantages of strain-relaxed epitaxial intermetallics for advanced interconnect applicationsengProceedings paper10.1109/IITC66087.2025.11075463WOS:001554227600059