Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Lukyanchikova, N. B.N. B.LukyanchikovaPetrichuk, M. V.M. V.PetrichukGarbar, N. P.N. P.GarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4544Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge densityJournal article