Mahatme, N.N.MahatmeZhang, E.E.ZhangReed, R.A.R.A.ReedBhuva, B.L.B.L.BhuvaSchrimpf, R.D.R.D.SchrimpfFleetwood, D.M.D.M.FleetwoodLinten, DimitriDimitriLintenSimoen, EddyEddySimoenGriffoni, AlessioAlessioGriffoniAoulaiche, MarcMarcAoulaicheJurczak, GosiaGosiaJurczakGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-2020120018-9499https://imec-publications.be/handle/20.500.12860/21074Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMsJournal article