Switching behavior of HfO2-based resistive RAM with vertical CNT bottom electrode

Avasarala, Naga SrutiNaga SrutiAvasaralaWouters, DirkDirkWoutersJurczak, MalgorzataMalgorzataJurczakVan Houdt, JanJanVan HoudtHeyns, MarcMarcHeynsvan der Veen, MarleenMarleenvan der Veen2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/27778Switching behavior of HfO2-based resistive RAM with vertical CNT bottom electrodeProceedings paperhttp://ieeexplore.ieee.org/document/7939107/