Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Meneghini, MatteoMatteoMeneghiniRossetto, IsabellaIsabellaRossettoBorga, MatteoMatteoBorgaCanato, EleonoraEleonoraCanatoDe Santi, CarloCarloDe SantiRampazzo, FabianaFabianaRampazzoMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HovePosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutere2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28962Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometryProceedings paperhttp://ieeexplore.ieee.org/document/7936311/