Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces

Afanasiev, ValeriValeriAfanasievHoussa, MichelMichelHoussaStesmans, AndreAndreStesmansSouriau, LaurentLaurentSouriauLoo, RogerRogerLooMeuris, MarcMarcMeuris2021-10-172021-10-1720090003-6951https://imec-publications.be/handle/20.500.12860/14877Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfacesJournal article