Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages align

Franke, Joern-HolgerJoern-HolgerFrankeFrommhold, AndreasAndreasFrommholdDavydova, NataliaNataliaDavydovaAubert, RemkoRemkoAubertNair, Vineet VijayakrishnanVineet VijayakrishnanNairKovalevich, TatianaTatianaKovalevichRio, DavidDavidRioBekaert, JoostJoostBekaertWang, ErikErikWangRispens, GijsbertGijsbertRispensMaslow, MarkMarkMaslowHendrickx, EricEricHendrickx2022-03-112022-03-112021978-1-5106-4051-10277-786XWOS:000672825700014https://imec-publications.be/handle/20.500.12860/39414Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages alignProceedings paper10.1117/12.2584733978-1-5106-4052-8WOS:000672825700014