Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Rai, NarendraNarendraRaiSarkar, RitamRitamSarkarMahajan, AshutoshAshutoshMahajanLaha, ApurbaApurbaLahaSaha, DipankarDipankarSahaGanguly, SwaroopSwaroopGanguly2024-03-282024-01-132024-03-2820230021-8979WOS:001135920300003https://imec-publications.be/handle/20.500.12860/43412Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistorsJournal article10.1063/5.0176944WOS:001135920300003SCREW DISLOCATIONSGROWTH STOICHIOMETRYTHREADING EDGEGANHEMTSFILMS