Substrate bias effect on the capture kinetics of random telegraph signals in submicron p -channel silicon Metal-Oxide-Semiconductor Transistors

Simoen, EddyEddySimoenClaeys, C.C.Claeys2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/876Substrate bias effect on the capture kinetics of random telegraph signals in submicron p -channel silicon Metal-Oxide-Semiconductor TransistorsJournal article