Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime

Yousif, M. Y. A.M. Y. A.YousifWillander, M.M.WillanderLundgren, P.P.LundgrenCaymax, MattyMattyCaymax2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5866Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regimeJournal article