Another approach to form p+ emitter for Cz rear junction n-type solar cells: above 17% efficiency cells with CVD boron-doped epitaxial emitter

Gong, ChunChunGongVan Nieuwenhuysen, KrisKrisVan NieuwenhuysenPosthuma, NielsNielsPosthumaVan Kerschaver, EmmanuelEmmanuelVan KerschaverPoortmans, JefJefPoortmans2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15366Another approach to form p+ emitter for Cz rear junction n-type solar cells: above 17% efficiency cells with CVD boron-doped epitaxial emitterProceedings paper