A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon

Melkonyan, DavitDavitMelkonyanFleischmann, ClaudiaClaudiaFleischmannBogdanowicz, JanuszJanuszBogdanowiczMorris, RichardRichardMorrisCuduvally, RamyaRamyaCuduvallyVandervorst, WilfriedWilfriedVandervorst2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/31329A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in siliconProceedings paper