Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy

Cantoro, MircoMircoCantoroMerckling, ClementClementMercklingJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronBender, HugoHugoBenderMoussa, AlainAlainMoussaDouhard, BastienBastienDouhardVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeynsDekoster, JohanJohanDekosterLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20415Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxyProceedings paper