Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers

Afanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansZhao, ChaoChaoZhaoCaymax, MattyMattyCaymaxRittersma, Z.M.Z.M.RittersmaMaes, JanJanMaes2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10004Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layersJournal article