Effectiveness of atomic and molecular hydrogen passivation of a silicon/silicon oxide interface with a deposited oxide

Loozen, XavierXavierLoozenJohn, JoachimJoachimJohnChoulat, PatrickPatrickChoulatMa, YueYueMaDekkers, HaroldHaroldDekkersAgostinelli, GuidoGuidoAgostinelliBeaucarne, GuyGuyBeaucarne2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14062Effectiveness of atomic and molecular hydrogen passivation of a silicon/silicon oxide interface with a deposited oxideProceedings paper