Experimental and theoretical investigation of defects at (100) Si(1-x)Ge(x)/oxide interfaces

Houssa, MichelMichelHoussaPourtois, GeoffreyGeoffreyPourtoisMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsAfanas'ev, ValeryValeryAfanas'evStesmans, AndreAndreStesmans2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/19089Experimental and theoretical investigation of defects at (100) Si(1-x)Ge(x)/oxide interfacesJournal article