In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets

Cretu, B.B.CretuVeloso, AnabelaAnabelaVelosoSimoen, EddyEddySimoen2023-07-032023-06-112023-07-0320230038-1101WOS:000990657100001https://imec-publications.be/handle/20.500.12860/41711In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheetsJournal article10.1016/j.sse.2023.108591WOS:000990657100001PARAMETER EXTRACTIONELECTRICAL NOISE1/F NOISEMOSFETS