Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Molle, AlessandroAlessandroMolleLamagna, LucaLucaLamagnaGrazianetti, C.C.GrazianettiBrammertz, GuyGuyBrammertzMerckling, ClementClementMercklingCaymax, MattyMattyCaymaxSpiga, SabinaSabinaSpigaFanciulli, MarcoMarcoFanciulli2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/19448Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer depositionJournal article