Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K

Simoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/878Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 KJournal article