Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs

Guo, WeiWeiGuoCretu, B.B.CretuRoutoure, J.-M.J.-M.RoutoureCarin, R.R.CarinSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaCollaert, NadineNadineCollaertPut, SofieSofiePutClaeys, CorCorClaeys2021-10-172021-10-1720080038-1101https://imec-publications.be/handle/20.500.12860/13826Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETsJournal article