GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current

Ercolano, FrancoFrancoErcolanoTallarico, Andrea NataleAndrea NataleTallaricoMillesimo, MaurizioMaurizioMillesimoGnani, ElenaElenaGnaniReggiani, SusannaSusannaReggianiFiegna, ClaudioClaudioFiegnaBorga, MatteoMatteoBorgaPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakeroot2025-06-052025-04-212025-06-0520241876-1100WOS:001455978800035https://imec-publications.be/handle/20.500.12860/45551GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage CurrentProceedings paper10.1007/978-3-031-48711-8_35978-3-031-48711-8WOS:001455978800035