Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Lin, ZaoyangZaoyangLinDekelver, SvenSvenDekelverCott, DaireDaireCottGroven, BenjaminBenjaminGrovenSergeant, StefanieStefanieSergeantConard, ThierryThierryConardWu, XiangyuXiangyuWuMorin, PierrePierreMorinLin, DennisDennisLinLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarDelabie, AnneliesAnneliesDelabie2025-06-052024-11-102025-06-0520240734-2101WOS:001344407200001https://imec-publications.be/handle/20.500.12860/44767Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer depositionJournal article10.1116/6.0003894WOS:001344407200001WETTABILITYMOS2GRAPHENE