Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs

Caymax, MattyMattyCaymaxDelhougne, RomainRomainDelhougneLoo, RogerRogerLooEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenRies, MichaelMichaelRiesLuysberg, MartinaMartinaLuysberg2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10197Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETsOral presentation