Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique

Liu, WenhuWenhuLiuPey, Kin LeongKin LeongPeyRaghavan, NagarajanNagarajanRaghavanWu, XingXingWuBosman, MichelMichelBosmanKauerauf, ThomasThomasKauerauf2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19321Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting techniqueProceedings paper