Characterization of ultra-thin SOI transistors down to 20nm gate length regime with scanning spreading resistance microscopy (SSRM)

Hartwich, J.J.HartwichAlvarez, DavidDavidAlvarezDreeskornfeld, L.L.DreeskornfeldSpecht, M.M.SpechtVandervorst, WilfriedWilfriedVandervorstRisch, LotharLotharRisch2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7643Characterization of ultra-thin SOI transistors down to 20nm gate length regime with scanning spreading resistance microscopy (SSRM)Proceedings paper