Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Toledano Luque, MariaMariaToledano LuqueKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselFranco, JacopoJacopoFrancoRagnarsson, Lars-AkeLars-AkeRagnarssonGrasser, TiborTiborGrasserGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/19898Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stressJournal article