A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

Illarionov, Yu. Yu.Yu. Yu.IllarionovBina, M.M.BinaTyaginov, S. E.S. E.TyaginovRott, K.K.RottReisinger, H.H.ReisingerKaczer, BenBenKaczerGrasser, T.T.Grasser2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23979A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETsProceedings paperhttp://dx.doi.org/10.1109/IRPS.2014.6861190