Wafer-to-Wafer Hybrid Bonding Technology with 300nm Interconnect Pitch

Van Huylenbroeck, StefaanStefaanVan HuylenbroeckChew, Soon AikSoon AikChewZhang, BoyaoBoyaoZhangBogaerts, LieveLieveBogaertsHeyvaert, CindyCindyHeyvaertDewilde, SvenSvenDewildeIacovo, SerenaSerenaIacovoStucchi, MicheleMicheleStucchiDe Vos, JoeriJoeriDe VosBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2026-03-242026-03-242025979-8-3315-3933-70569-5503https://imec-publications.be/handle/20.500.12860/58938A wafer to wafer hybrid bonding technology is realized featuring a hybrid interconnect pitch scaling down to 300 nm. Integration challenges and optimizations are extensively discussed. High electrical yield on large daisy chain structures is demonstrated.engWafer-to-Wafer Hybrid Bonding Technology with 300nm Interconnect PitchProceedings paper10.1109/ECTC51687.2025.00100WOS:001537918100091