Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Avasarala, Naga SrutiNaga SrutiAvasaralaDonadio, Gabriele LucaGabriele LucaDonadioWitters, ThomasThomasWittersOpsomer, KarlKarlOpsomerGovoreanu, BogdanBogdanGovoreanuFantini, AndreaAndreaFantiniClima, SergiuSergiuClimaOh, HyungrockHyungrockOhKundu, ShreyaShreyaKunduDevulder, WouterWouterDevuldervan der Veen, MarleenMarleenvan der VeenVan Houdt, JanJanVan HoudtHeyns, MarcMarcHeynsGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30163Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layersProceedings paperhttps://ieeexplore.ieee.org/document/8510680