High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

Vellas, N.N.VellasGaquire, C.C.GaquireGuhel, Y.Y.GuhelWerquin, M.M.WerquinDucatteau, D.D.DucatteauBoudart, B.B.Boudartde Jaeger, J.C.J.C.de JaegerBougrioua, Z.Z.BougriouaGermain, MarianneMarianneGermainLeys, MaartenMaartenLeysMoerman, IngridIngridMoermanBorghs, GustaafGustaafBorghs2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/7007High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHzProceedings paper