Bias temperature instability effects in devices with fully-silicided gate stacks, strained-Si and multiple-gate architectures

Shickova, AdelinaAdelinaShickova2021-10-172021-10-172008-12https://imec-publications.be/handle/20.500.12860/14464Bias temperature instability effects in devices with fully-silicided gate stacks, strained-Si and multiple-gate architecturesPHD thesis