Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN

Filho Goncalez, WalterWalterFilho GoncalezBorga, MatteoMatteoBorgaGeens, KarenKarenGeensKhan, Md ArifMd ArifKhanCingu, DeepthiDeepthiCinguChatterjee, UrmimalaUrmimalaChatterjeeDecoutere, StefaanStefaanDecoutereKnaepen, WernerWernerKnaepenKizir, SedaSedaKizirArnou, PanagiotaPanagiotaArnouBakeroot, BenoitBenoitBakeroot2024-10-092024-08-052024-10-0920240018-9383WOS:001279065500001https://imec-publications.be/handle/20.500.12860/44269Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaNJournal article10.1109/TED.2024.3422950WOS:001279065500001ISSUES