Comprehensive study of the fabrication of SGOI substrates By the Ge condensation technique: oxidation kinetics and relaxation mechanism

Souriau, LaurentLaurentSouriauWang, GangGangWangLoo, RogerRogerLooCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorst2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16261Comprehensive study of the fabrication of SGOI substrates By the Ge condensation technique: oxidation kinetics and relaxation mechanismProceedings paperhttp://www.electrochem.org/