Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI

Simoen, EddyEddySimoenClaeys, CorCorClaeysFang, WenWenFangLuo, JunJunLuoZhao, ChaoChaoZhao2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25909Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTIProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288543